unisonic technologies co., ltd 3n50 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-530.b 3a, 500v n-channel power mosfet ? description the utc 3n50 is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior switching per formance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 3n50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. ? features * r ds(on) =3.2 ? @ v gs =10v * high switching speed * 100% avalanche tested ? symbol 1.gate 3.source 2.drain 1 to-252 1 to-220f ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 3n50l-tf3-t 3N50G-TF3-T to-220f g d s tube 3n50l-tn3-r 3n50g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
3n50 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-530.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v continuous (t c =25c) i d 3 (note 5) a drain current pulsed (note 2) i dm 12 (note 5) a avalanche current (note 2) i ar 3 a single pulsed (note 3) e as 200 mj avalanche energy repetitive (note 4) e ar 6.2 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220f 25 power dissipation (t c =25c) to-252 50 w to-220f 0.2 derate above 25c to-252 p d 0.4 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 40mh, i as = 3a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 3a, di/dt 200a/s, v dd bv dss , starting t j = 25c 5. drain current limited by maximum junction temperature ? thermal data parameter symbol ratings unit to-220f 62.5 junction to ambient to-252 ja 110 c/w to-220f 4.9 junction to case to-252 jc 2.5 c/w
3n50 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-530.b ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 500 v drain-source leakage current i dss v ds =500v, v gs =0v 1 a forward v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =1.5a 2.2 3.2 ? dynamic parameters input capacitance c iss 280 365 pf output capacitance c oss 50 65 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 8.5 11 pf switching parameters total gate charge q g 10 13 nc gate to source charge q gs 1.5 nc gate to drain charge q gd v gs =10v, v ds =400v, i d =3a (note 1, 2) 5.5 nc turn-on delay time t d(on) 10 30 ns rise time t r 25 60 ns turn-off delay time t d(off) 35 80 ns fall-time t f v dd =250v, i d =3a, r g =25 ? (note 1, 2) 25 60 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 3 a maximum body-diode pulsed current i sm 12 a drain-source diode forward voltage v sd i s =3a, v gs =0v 1.4 v body diode reverse recovery time t rr 170 ns body diode reverse recovery charge q rr i s =3a, v gs =0v, di f /dt=100a/s (note 1) 0.7 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
3n50 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-530.b ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
3n50 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-530.b ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver peak diode recovery dv/dt test circuit & waveforms v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current
3n50 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-530.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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